 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 60V : RSAT = 30m ; IC = 5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES * Extremely low equivalent on-resistance; RSAT = 30mV at 6A * 5 amps continuous current * Up to 20 amps peak current * Very low saturation voltages * Excellent hFE characteristics up to 10 amps SOT89 APPLICATIONS * Emergency lighting circuits * Motor driving (including DC fans) * Solenoid, relay and actuator drivers * DC-DC modules * Backlight inverters * Power switches * MOSFET gate drivers PINOUT ORDERING INFORMATION DEVICE ZXTN2010ZTA REEL SIZE 7" TAPE WIDTH 12mm embossed QUANTITY PER REEL 1,000 units DEVICE MARKING 851 TOP VIEW ISSUE 1 - JUNE 2005 1 SEMICONDUCTORS ZXTN2010Z ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (a) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD T j , T stg LIMIT 150 60 7 5 20 1.5 12 2.1 16.8 -55 to +150 UNIT V V V A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R JA R JA VALUE 83 60 UNIT C/W C/W Junction to ambient (b) NOTES (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. ISSUE 1 - JUNE 2005 SEMICONDUCTORS 2 ZXTN2010Z CHARACTERISTICS ISSUE 1 - JUNE 2005 3 SEMICONDUCTORS ZXTN2010Z ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CER BV CEO BV EBO I CBO I CER R I EBO V CE(SAT) 17 35 40 90 170 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 100 100 55 20 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF * Measured under pulsed conditions. Pulse width 970 910 200 200 105 40 130 31 42 760 300 s; duty cycle 2%. pF ns 300 1k MIN. 150 150 60 7 TYP. 190 190 80 8.1 20 0.5 20 0.5 10 30 55 65 125 230 1100 1050 MAX. UNIT CONDITIONS V V V V nA A nA A nA mV mV mV mV mV mV mV I C =100 A I C =1 A, RB 1k I C =10mA* I E =100 A V CB =120V VCB=120V,Tamb=100 C V CB =120V VCB=120V,Tamb=100 C V EB =6V I C =100mA, I B =5mA* IC=1A, IB=100mA* IC=1A, IB=50mA* IC=2A, IB=50mA* IC=6A, IB=300mA* I C =6A, I B =300mA* I C =6A, V CE =1V* I C =10mA, V CE =1V* IC=2A, VCE=1V* IC=5A, VCE=1V* IC=10A, VCE=1V* I C =100mA, V CE =10V f=50MHz V CB =10V, f=1MHz* I C =1A, V CC =10V, I B1 =I B2 =100mA ISSUE 1 - JUNE 2005 SEMICONDUCTORS 4 ZXTN2010Z TYPICAL CHARACTERISTICS ISSUE 1 - JUNE 2005 5 SEMICONDUCTORS ZXTN2010Z PACKAGE OUTLINE PAD LAYOUT DETAILS Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters DIM Min A b b1 b2 c D 1.40 0.38 1.50 0.28 4.40 Max 1.60 0.48 0.53 1.80 0.44 4.60 Min 0.550 0.015 0.060 0.011 0.173 Max 0.630 0.019 0.021 0.071 0.017 0.181 e E E1 G H Inches DIM Min 1.40 3.75 2.90 2.60 Max 1.50 4.25 2.60 3.00 2.85 Min 0.055 0.150 0.114 0.102 Max 0.059 0.167 0.102 0.118 0.112 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2005 SEMICONDUCTORS 6 |
Price & Availability of ZXTN2010ZTA
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |